tss-mi-donduckoi ^pioaucta, one. 20 stern ave. springfield, new jersey 07081 u.s.a. D40C series telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 30-50 volts .5 amp, 6.25 watts designed for driver, regulator, touch switch, i.c. driver, audio output, relay substitute, oscillator, servo-amplifier, and capacitor multiplier applications. features: ? hfe min. ? 10,000 and 40,000 ? 1.33 watt power dissipation at ta = 25 nfn collector case style to-202 dimensions are in inches and (millimeter*) 0.360-0.410 type to-202 term. 1 emit^e* term 2 base te?m. 3 collector tab collector maximum ratings (ta = 25 c) (unless otherwise specified) rating collector-emitter voltage collector-emitter voltage emitter base voltage collector current ? continuous peak'1> base current ? continuous total power dissipation @ t^ = 25 c @tc = 25c operating and storage junction temperature range symbol vceo vces vebo 'cm ib pd tj, tstg D40C1 30 30 13 .5 1.0 0.1 1.33 6.25 -55 to +150 D40C4 40 40 13 .5 1.0 0.1 1.33 6.25 -5510+150 040c7 50 50 13 .5 1.0 0.1 1.33 6.25 -55to+150 units volts volts volts a a watts c thermal characteristics thermal resistance, junction to ambient thermal resistance, junction to case maximum lead temperature tor soldering purposes: w from case for 5 seconds r0ja rffjc tl 75 20 260 75 20 260 75 20 260 "c/w c/w c (1) pulse test: pulse width = 300ms. duty cycle < 2%. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished b> nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. qurtllh/
electrical characteristics (tc= 25 c) (unless otherwise specified) characteristic symbol win typ max unit off characteristics11* collector-emitter voltage D40C1 (lc = 10ma) D40C4 D40C7 collector cut-off current (tc = 25 c) (vce = rated vces) (tc = 1 50 c) emitter cutoff current (veb=13v) vceo ices icbo iebo 30 40 50 ? ? ? ? ? ? 0.5 20 0.1 volts "a *a second breakdown | second breakdown with base forward biased fbsoa see figure 2 on characteristics dc current gain (lc = 200ma, vce = 5v) collector-emitter saturation voltage (lc = 500ma, ib = 0.5ma) base-emitter saturation voltage (lc = 500ma, ib = 0.5ma) r?fe vce(sat) vbe(sat) 10k ? ? ? ? ? 60k 1.5 2.0 v volts dynamic characteristics collector capacitance (vce = 10v, f =1mhz) current gain - bandwidth product (ic = 20ma, vce = 5v) ccbo h ? ? ? 75 220 ? pf mhz switching characteristics resistive load delay time + rise time storage time fall time lc = 1a, ibi = ib2 = 1ma vcg = 30v, tp = 25 msec td + tr t. tf ? ? ? 100 350 800 ? ? ? ns (1) pulse test: pw < 300ms duty cycle < 2%. iook 80k 6 ok 20k i ok 8k 6k ik 800 00 200 pulsed measurement pulse wioth ? 2 millisec duty cycle s 2 % c -5 volts 040ci.4. ano 7 4 6 20 6o :00 ioc 800 2 6 k> 40 8d 200 ^ooiooo ic-collector current-milliamperes fig 1. typical hpe vs. lc 4 6 * to 20 ?0 60 80 100 vce-collector-to-emitter voltage-volts fig. 2 safe region of operation 372
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